monte carlo simulation of multiplication factor in pin in0.52al0.48as avalanche photodiodes
نویسندگان
چکیده
in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulated results with the experimentalresults.
منابع مشابه
Monte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes
In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulat...
متن کاملmonte carlo simulation of multiplication factor in pin in0.52al0.48as avalanche photodiodes
in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...
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عنوان ژورنال:
international journal of communications and information technologyجلد ۱، شماره ۱، صفحات ۲۱-۲۴
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